參數(shù)資料
型號: MDC5001T1
廠商: 樂山無線電股份有限公司
英文描述: Low Voltage Bias Stabilizer with Enable
中文描述: 低電壓偏置穩(wěn)定與啟用
文件頁數(shù): 1/10頁
文件大?。?/td> 188K
代理商: MDC5001T1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field
Effect Transistors
Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
and Bypass Components
Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc
Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric
Changes
Consumes
0.5 mW at VCC = 2.75 V
Active High Enable is CMOS Compatible
This device provides a reference voltage and acts as a DC feedback element
around an external discrete, NPN BJT or N–Channel FET. It allows the external
transistor to have its emitter/source directly grounded and still operate with a stable
collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF
stages operating from a low voltage regulated supply, but can also be used to stabilize
the bias current of any linear stage in order to eliminate emitter/source bypassing and
achieve tighter bias regulation over temperature and unit variations. The “ENABLE”
polarity nulls internal current, Enable current, and RF transistor current in “STANDBY.”
This device is intended to replace a circuit of three to six discrete components.
The combination of low supply voltage, low quiescent current drain, and small
package make the MDC5001T1 ideal for portable communications applications such
as:
Cellular Telephones
Pagers
PCN/PCS Portables
GPS Receivers
PCMCIA RF Modems
Cordless Phones
Broadband and Multiband Transceivers and Other Portable Wireless Products
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
TA
Tstg
TJ
VCEO
VENBL
15
Vdc
Ambient Operating Temperature Range
–40 to +85
°
C
Storage Temperature Range
–65 to +150
°
C
Junction Temperature
150
°
C
Collector Emitter Voltage (Q2)
–15
V
Enable Voltage (Pin 5)
VCC
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Power Dissipation
(FR–5 PCB of 1
×
0.75
×
0.062
, TA = 25
°
C)
Derate above 25
°
C
PD
150
1.2
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
833
°
C/W
SMALLBLOCK is a trademark of Motorola, Inc.
Order this document
by MDC5001T1/D
SEMICONDUCTOR TECHNICAL DATA
SILICON
SMALLBLOCK
INTEGRATED CIRCUIT
CASE 419B–01, Style 19
SOT–363
INTERNAL CIRCUIT DIAGRAM
VCC (4)
GND (2) and (3)
Vref (6)
Iout (1)
Q1
Q2
R1
R2
R3
R4
123
65
4
R6
R5
Q4
VENBL
(5)
REV 1
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