參數(shù)資料
型號(hào): MHL19338
廠商: MOTOROLA INC
元件分類: 衰減器
英文描述: PCS BAND RF LINEAR LDMOS AMPLIFIER
中文描述: 1900 MHz - 2000 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: CASE 301AP-02, 4 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 95K
代理商: MHL19338
1
MHL19338
Motorola, Inc. 2002
The RF Line
Designed for ultra–linear amplifier applications in
50 ohm system
s operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
Third Order Intercept: 46 dBm Typ
Power Gain: 30 dB Typ (@ f = 1960 MHz)
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+10
dBm
Storage Temperature Range
T
stg
–40 to +100
°
C
Operating Case Temperature Range
T
C
–20 to +100
°
C
ELECTRICAL CHARACTERISTICS
(V
DD
= 28 Vdc, T
C
= 25
°
C; 50
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
500
525
mA
Power Gain
(f = 1960 MHz)
G
p
29
30
31
dB
Gain Flatness
(f = 1900–2000 MHz)
G
F
0.1
0.4
dB
Power Output @ 1 dB Comp.
(f = 1950 MHz)
P
out
1 dB
35
36
dBm
Input VSWR
(f = 1900–2000 MHz)
VSWR
in
1.2:1
1.5:1
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
ITO
45
46
dBm
Noise Figure
(f = 2000 MHz)
NF
4.2
4.5
dB
Order this document
by MHL19338/D
SEMICONDUCTOR TECHNICAL DATA
1900–2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP–02, STYLE 1
REV 2
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