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參數(shù)資料
| 型號(hào)： | MCTV75P60E1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | 75A, 600V P-Type MOS Controlled Thyristor (MCT) |
| 中文描述： | 85 A, 600 V, P-CH MOS CONTROLLED THYRISTOR, TO-247 |
| 封裝： | TO-247, 5 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 50K |
| 代理商： | MCTV75P60E1 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1999
2-18
Semiconductor
MCTV75P60E1,
MCTA75P60E1
75A, 600V
Package
JEDEC STYLE TO-247 5-LEAD
JEDEC MO-093AA (5-LEAD TO-218)
Symbol
ANODE
ANODE
CATHODE
GATE RETURN
GATE
ANODE
ANODE
CATHODE
GATE RETURN
GATE
G
A
K
Features
75A, -600V
V
TM
= -1.3V(Maximum) at I = 75A and +150
o
C
2000A Surge Current Capability
2000A/
μ
s di/dt Capability
MOS Insulated Gate Control
120A Gate Turn-Off Capability at +150
o
C
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive pulsed control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches and other power switching applications.
The MCT is especially suited for resonant (zero voltage or
zero current switching) applications. The SCR like forward
drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
o
C with active switching.
PART NUMBER INFORMATION
PART NUMBER
PACKAGE
BRAND
MCTV75P60E1
TO-247
MV75P60E1
MCTA75P60E1
MO-093AA
MA75P60E1
NOTE: When ordering, use the entire part number.
April 1999
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
MCTV75P60E1
MCTA75P60E1
-600
+5
UNITS
V
V
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DRM
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Continuous Cathode Current (See Figure 2)
T
C
= +25
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non-Repetitive Peak Cathode Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KC
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GA
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GAM
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(0.063" (1.6mm) from case for 10s)
NOTE:
1. Maximum Pulse Width of 250
μ
s (Half Sine) Assume T
J
(Initial) = +90
o
C and T
J
(Final) = T
J
(Max) = +150
o
C
I
K25
I
K90
85
75
A
A
A
A
V
V
2000
120
±
20
±
25
See Figure 11
2000
208
1.67
-55 to +150
260
A/
μ
s
W
W/
o
C
o
C
o
C
T
L
File Number
3374.6
PART WITHDRAWN
PROCESS OBSOLETE - NO NEW DESIGNS
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