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參數(shù)資料
| 型號： | MCTG35P60F1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | 35A, 600V P-Type MOS Controlled Thyristor (MCT) |
| 中文描述： | 60 A, 600 V, P-CH MOS CONTROLLED THYRISTOR, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MCTG35P60F1 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1999
2-2
Semiconductor
MCTG35P60F1
35A, 600V
P-Type MOS Controlled Thyristor (MCT)
Package
Symbol
A
K
G
G
A
K
Features
35A, -600V
V
TM
= -1.3V(Maximum) at I = 35A and +150
o
C
800A Surge Current Capability
800A/
μ
s di/dt Capability
MOS Insulated Gate Control
50A Gate Turn-Off Capability at +150
o
C
Description
The MCT is an MOS Controlled Thyristor designed for
switching currents on and off by negative and positive pulsed
control of an insulated MOS gate. It is designed for use in
motor controls, inverters, line switches and other power
switching applications.
The MCT is especially suited for resonant (zero voltage or
zero current switching) applications. The SCR like forward
drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
o
C with active switching.
PART NUMBER INFORMATION
PART NUMBER
PACKAGE
BRAND
MCTG35P60F1
TO-247
M35P60F1
NOTE: When ordering, use the entire part number.
April 1999
Absolute Maximum Ratings
T
C
= +25
o
C
, Unless Otherwise Specified
MCTG35P60F1
-600
+5
UNITS
V
V
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DRM
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Continuous Cathode Current (See Figure 2)
T
C
= +25
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +115
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non-Repetitive Peak Cathode Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KC
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GA
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GAM
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(0.063" (1.6mm) from case for 10s)
NOTE:
1. Maximum Pulse Width of 250
μ
s (Half Sine) Assume T
J
(Initial) = +90
o
C and T
J
(Final) = T
J
(Max) = +150
o
C
I
K25
I
K115
60
35
800
50
±
20
±
25
A
A
A
A
V
V
See Figure 11
800
178
1.43
-55 to +150
260
A/
μ
s
W
W/
o
C
o
C
o
C
T
L
File Number
3602.5
PART WITHDRAWN
PROCESS OBSOLETE - NO NEW DESIGNS
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