- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄380478 > MCT3D65P100F2 (INTERSIL CORP) 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) PDF資料下載
參數(shù)資料
| 型號(hào)： | MCT3D65P100F2 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) |
| 中文描述： | 85 A, 1000 V, P-CH MOS CONTROLLED THYRISTOR, MO-093AA |
| 封裝： | PLASTIC PACKAGE-5 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | MCT3D65P100F2 |
1
Semiconductor
April 1999
MCT3A65P100F2,
MCT3D65P100F2
65A, 1000V, P-Type
MOS-Controlled Thyristor (MCT)
Features
65A, -1000V
V
TM
= -1.4V (Max) at I = 65A and 150
o
C
2000A Surge Current Capability
2000A/
μ
s di/dt Capability
MOS Insulated Gate Control
100A Gate Turn-Off Capability at 150
o
C
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive pulsed control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches, and other power switching applications.
The MCT is especially suited for resonant (zero voltage or zero
current switching) applications. The SCR like forward drop
greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at junc-
tion temperatures up to 150
o
C with active switching.
Formerly developmental type TA49226.
Symbols
Packaging
Part Number Information
PART NUMBER
PACKAGE
BRAND
MCT3A65P100F2
TO-247
M65P100F2
MCT3D65P100F2
MO-093AA
M65P100F2
NOTE:
When ordering, use the entire part number.
GATE
ANODE
CATHODE
CATHODE (TAB)
ANODE
CATHODE
GATE RETURN
GATE
(ANODE KELVIN)
JEDEC MO-093AA
JEDEC STYLE TO-247
GATE RETURN
ACATHODE
GATE
CATHODE
(FLANGE)
ANODE
CATHODE
(BOTTOM SIDE
METAL)
GATE RETURN
ACATHODE
GATE
ANODE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1999
File Number
4454.2
[ /Title
(MCT3
A65P1
00F2,
MCT3
D65P1
00F2)
/Sub-
ject
(65A,
1000V,
P-
Type
MOS-
Con-
trolled
Thyris-
tor
(MCT)
)
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
[
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
PART WITHDRAWN
PROCESS OBSOLETE - NO NEW DESIGNS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCT66 | HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS |
| MCTA65P100F1 | 65A, 1000V P-Type MOS Controlled Thyristor (MCT) |
| MCTV65P100F1 | 65A, 1000V P-Type MOS Controlled Thyristor (MCT) |
| MCTA75P60E1 | 75A, 600V P-Type MOS Controlled Thyristor (MCT) |
| MCTV75P60E1 | 75A, 600V P-Type MOS Controlled Thyristor (MCT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCT4 | 功能描述:晶體管輸出光電耦合器 TO-18 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| MCT-4 | 功能描述:TERM BARRIER 4CIRC DUAL ROW RoHS:是 類別:連接器，互連式 >> 接線座 - 隔板塊 系列:M 標(biāo)準(zhǔn)包裝:1 系列:43000 端接塊類型:阻隔塊 電路數(shù):27 導(dǎo)線入口數(shù)目:27 間距:0.438"（11.12mm） 行數(shù):1 電流:20A 電壓:600V 線規(guī):12-22 AWG 頂部端子:螺釘 底部端子:閉合式 阻擋層類型:雙壁（雙） 特點(diǎn):- 顏色:- 包裝:散裝 安裝類型:底座安裝或面板安裝 工作溫度:105°C 材料 - 絕緣體:聚丙烯（PP） 材料可燃性額定值:UL94 V-0 |
| MCT4_Q | 功能描述:晶體管輸出光電耦合器 TO-18 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| MCT-47 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:VibraKrimpa?￠ Quick Disconnect, Male, for 14-16 (2.00-1.30) Wire, Box, Tab 4.75mm(.187") x 0.51mm (.020") |
| MCT4R | 功能描述:光電晶體管 TO-18 PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。