參數(shù)資料
型號: MCR22-6
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
中文描述: 1.5 A, 400 V, SCR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁數(shù): 2/7頁
文件大小: 69K
代理商: MCR22-6
MCR226, MCR228
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1000 )
T
C
= 25
°
C
T
C
= 110
°
C
I
DRM
, I
RRM
10
200
A
A
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 2)
(I
TM
= 1 A Peak)
V
TM
1.2
1.7
V
Gate Trigger Current (Continuous dc) (Note 3)
(V
AK
= 6 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
30
200
500
A
Gate Trigger Voltage (Continuous dc) (Note 3)
(V
AK
= 7 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
V
GT
0.8
1.2
V
Gate NonTrigger Voltage (Note 2)
(V
AK
= 12 Vdc, R
L
= 100 )
T
C
= 110
°
C
V
GD
0.1
V
Holding Current
(V
= 12 Vdc, Gate Open)
Initiating Current = 200 mA
T
= 25
°
C
T
C
= 40
°
C
I
H
2.0
5.0
10
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(T
C
= 110
°
C)
2. Pulse Width =1.0 ms, Duty Cycle
3. R
GK
Current not included in measurement.
dv/dt
25
V/ s
1%.
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
相關(guān)PDF資料
PDF描述
MCR22-8 Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
MCR264-4 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,400V硅控整流器反向截止晶閘管)
MCR264-6 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,600V硅控整流器反向截止晶閘管)
MCR264-8 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,800V硅控整流器反向截止晶閘管)
MCR265-10 Silicon Controlled Rectifier Reverse Blocking Thyristor(55A,800V硅控整流器反向截止晶閘管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR22-6_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6G 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRA 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRAG 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRP 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube