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參數(shù)資料
| 型號(hào)： | MCR264-8 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(40A，800V硅控整流器反向截止晶閘管) |
| 中文描述： | 40 A, 600 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 73K |
| 代理商： | MCR264-8 |
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR264–4/D
Preferred Device
Reverse Blocking Thyristors
Designed for back-to-back SCR output devices for solid state relays
or applications requiring high surge operation.
Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
400 Amperes Surge Capability
Blocking Voltage to 600 Volts
Device Marking: Logo, Device Type, e.g., MCR264–4, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ =
40 to 125
°
C, Sine Wave 50 to
60 Hz; Gate Open)
Symbol
Value
Unit
MCR264–4
MCR264–6
MCR264–8
VDRM,
VRRM
200
400
600
Volts
On-State RMS Current
(TC = 80
°
C; 180
°
Conduction Angles)
IT(RMS)
40
A
Average On-State Current
(TC = 80
°
C; 180
°
Conduction Angles)
IT(AV)
25
A
Peak Non-repetitive Surge Current
(TC = 80
°
C)
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125
°
C)
Forward Peak Gate Power
(Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
ITSM
400
450
A
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80
°
C)
PG(AV)
0.5
Watt
Forward Peak Gate Current
(Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge
conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
SCRs
40 AMPERES RMS
200 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR264–4
TO220AB
500/Box
MCR264–6
TO220AB
MCR264–8
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
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| MCR265-10 | Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，800V硅控整流器反向截止晶閘管) |
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| MCR265-6 | Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，400V硅控整流器反向截止晶閘管) |
| MCR265-8 | Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，600V硅控整流器反向截止晶閘管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR264-9 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Thyristors |
| MCR265-006 | 制造商:ON Semiconductor 功能描述:SILICON CONTROLLED RECTIFIERS 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MCR265-008 | 制造商:ON Semiconductor 功能描述:Thyristor T0220 55A 600V Silicon Controlled Rectifier |
| MCR265-10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Thyristors |
| MCR265-2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Thyristors |
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