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參數(shù)資料
型號(hào): MCP660T-E/ST
廠商: Microchip Technology
文件頁數(shù): 45/68頁
文件大小: 0K
描述: IC OPAMP TRIPLE 60MHZ 14TSSOP
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 通用
電路數(shù): 3
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 32 V/µs
增益帶寬積: 60MHz
電流 - 輸入偏壓: 6pA
電壓 - 輸入偏移: 1800µV
電流 - 電源: 6mA
電流 - 輸出 / 通道: 80mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 帶卷 (TR)
2009-2012 Microchip Technology Inc.
DS22194D-page 5
MCP660/1/2/3/4/5/9
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 1 k to VL, CL = 20 pF and CS = VSS (refer to Figure 1-1 and Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2VD
D
V
CS Input Current, Low
ICSL
—-0.1—
nA
CS = 0V
CS High Specifications
CS Logic Threshold, High
VIH
0.8VD
D
VDD
V
CS Input Current, High
ICSH
—-0.7—
A
CS = VDD
GND Current
ISS
-2
-1
—A
CS Internal Pull Down Resistor
RPD
—5
M
Amplifier Output Leakage
IO(LEAK
)
—40—
nA
CS = VDD, TA = +125°C
CS Dynamic Specifications
CS Input Hysteresis
VHYST
0.25
V
CS High to Amplifier Off Time
(output goes High-Z)
tOFF
200
ns
G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
CS Low to Amplifier On Time
tON
—2
10
s
G = +1 V/V, VL = VSS,
CS = 0.2VDD to VOUT = 0.9(VDD/2)
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θJA
220.7
°C/W
Thermal Resistance, 6L-SOT-23
θJA
190.5
°C/W
Thermal Resistance, 8L-3x3 DFN
JA
56.7
°C/W (Note 2)
Thermal Resistance, 8L-MSOP
JA
—211
°C/W
Thermal Resistance, 8L-SOIC
JA
149.5
°C/W
Thermal Resistance, 8L-2x3 TDFN
θJA
52.5
°C/W
Thermal Resistance, 10L-3x3 DFN
JA
53.3
°C/W (Note 2)
Thermal Resistance, 10L-MSOP
JA
—202
°C/W
Thermal Resistance, 14L-SOIC
JA
95.3
°C/W
Thermal Resistance, 14L-TSSOP
JA
—100
°C/W
Thermal Resistance, 16L-QFN
JA
45.7
°C/W
Note 1:
Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2:
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
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