參數(shù)資料
型號(hào)： MCP4541T-503E/MF
廠商： Microchip Technology
文件頁(yè)數(shù)： 62/92頁(yè)
文件大?。?/td> 0K
描述： IC DGTL POT 50K 128TAPS 8-DFN
標(biāo)準(zhǔn)包裝： 1
接片： 129
電阻（歐姆）： 50k
電路數(shù)： 1
溫度系數(shù)： 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型： 非易失
接口： I²C（設(shè)備位址）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 8-DFN-EP（3x3）
包裝： 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面： 674 (CN2011-ZH PDF)
其它名稱： MCP4541T-503E/MFDKR
2008 Microchip Technology Inc.
DS22107A-page 65
MCP454X/456X/464X/466X
7.8
Modify Write Protect or WiperLock
Technology (High Voltage)
Enable and Disable
These commands are special cases of the High Volt-
age Decrement Wiper and the High Voltage Incre-
ment Wiper commands to the non-volatile memory
locations 02h, 03h, and 0Fh. This command is used to
enable or disable either the software Write Protect,
wiper 0 WiperLock Technology, or wiper 1 WiperLock
Technology. Table 7-6 shows the memory addresses,
the High Voltage command and the result of those
commands on the non-volatile WP, WL0, 0r WL1 bits.
7.8.1
SINGLE MODIFY (ENABLE OR
DISABLE) WRITE PROTECT OR
WIPERLOCK TECHNOLOGY (HIGH
VOLTAGE)
Figure 7-9 (Disable) and Figure 7-10 (Enable) show
the formats for a single Modify Write Protect or Wiper-
Lock Technology command.
A Modify Write Protect or WiperLock Technology
Command will only start an EEPROM write cycle (twc)
after a properly formatted Command has been
received and the Stop condition occurs.
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
TABLE 7-6:
ADDRESS MAP TO MODIFY WRITE PROTECT AND WIPERLOCK TECHNOLOGY
FIGURE 7-9:
I2C Disable Command Sequence.
FIGURE 7-10:
I2C Enable Command Sequence.
Memory
Address
Command’s and Result
High Voltage Decrement Wiper
High Voltage Increment Wiper
00h
Wiper 0 register is incremented
01h
Wiper 1 register is decremented
Wiper 1 register is incremented
02h
WL0 is enabled
WL0 is disabled
03h
WL1 is enabled
WL1 is disabled
04h (1)
TCON register not changed
05h - 0Eh (1)
Reserved
0Fh
WP is enabled
WP is disabled
Note 1:
Reserved addresses: Increment or Decrement commands are invalid for these addresses.
Control Byte
Disable Command
1
01
0
SA2 A1 A0 0
0
AD AD AD AD
A1 X
X A
P
1
2
3
Fixed
Address
Variable
Address
Device
Memory
Address
Command (Increment)
Write bit
0
Control Byte
Enable Command
1
01
0
SA2 A1 A0 0
1
AD AD AD AD
A0 X
X A P
0
1
2
3
Fixed
Address
Variable
Address
Device
Memory
Address
Command (Decrement)
Write bit
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