參數(shù)資料
型號(hào)： MCP4541T-503E/MF
廠商： Microchip Technology
文件頁(yè)數(shù)： 54/92頁(yè)
文件大?。?/td> 0K
描述： IC DGTL POT 50K 128TAPS 8-DFN
標(biāo)準(zhǔn)包裝： 1
接片： 129
電阻（歐姆）： 50k
電路數(shù)： 1
溫度系數(shù)： 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型： 非易失
接口： I²C（設(shè)備位址）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 8-DFN-EP（3x3）
包裝： 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面： 674 (CN2011-ZH PDF)
其它名稱： MCP4541T-503E/MFDKR
MCP454X/456X/464X/466X
DS22107A-page 58
2008 Microchip Technology Inc.
7.4
Write Data
Normal and High Voltage
The Write Command can be issued to both the Volatile
and Non-Volatile memory locations. The format of the
command, see Figure 7-2, includes the I2C Control
Byte, an A bit, the MCP4XXX Command Byte, an A bit,
the MCP4XXX Data Byte, an A bit, and a Stop (or
Restart) condition. The MCP4XXX generates the A / A
bits.
A Write command to a Volatile memory location
changes that location after a properly formatted Write
Command and the A / A clock have been received.
A Write command to a Non-Volatile memory location
will only start a write cycle after a properly formatted
Write Command have been received and the Stop
condition has occurred.
7.4.1
SINGLE WRITE TO VOLATILE
MEMORY
For volatile memory locations, data is written to the
MCP4XXX after every byte transfer (during the
Acknowledge). If a Stop or Restart condition is gener-
ated during a data transfer (before the A), the data will
not be written to the MCP4XXX. After the A bit, the
master can initiate the next sequence with a Stop or
Restart condition.
Refer to Figure 7-2 for the byte write sequence.
7.4.2
SINGLE WRITE TO NON-VOLATILE
MEMORY
The sequence to write to a single non-volatile memory
location is the same as a single write to volatile memory
with the exception that the EEPROM write cycle (twc) is
started after a properly formatted command, including
the Stop bit, is received. After the Stop condition occurs
the serial interface may immediately be re-enabled by
initiating a Start condition.
During an EEPROM write cycle, access to volatile
memory (addresses 00h, 01h, 04h, and 05h) is allowed
when using the appropriate command sequence.
Commands that address non-volatile memory are
ignored until the EEPROM write cycle (twc) completes.
This allows the Host Controller to operate on the
Volatile Wiper registers, the TCON register, and to
Read the Status Register. The EEWA bit in the Status
register indicates the status of an EEPROM Write
Cycle.
Once a write command to a Non-Volatile memory
location has been received, No other commands
should be received before the Stop condition occurs.
Figure 7-2 show the waveform for a single write.
7.4.3
CONTINUOUS WRITES TO
VOLATILE MEMORY
A continuous write mode of operation is possible when
writing to the volatile memory registers (address 00h,
01h, and 04h). This continuous write mode allows
writes without a Stop or Restart condition or repeated
transmissions of the I2C Control Byte. Figure 7-3
shows the sequence for three continuous writes. The
writes do not need to be to the same volatile memory
address. The sequence ends with the master sending
a STOP or RESTART condition.
7.4.4
CONTINUOUS WRITES TO
NON-VOLATILE MEMORY
If a continuous write is attempted on Non-Volatile
memory, the missing Stop condition will cause the com-
mand to be an error condition (A). A Start bit is required
to reset the command state machine.
7.4.5
THE HIGH VOLTAGE COMMAND
(HVC) SIGNAL
The
High
Voltage
Command
(HVC)
signal
is
multiplexed with Address 0 (A0) and is used to indicate
that the command, or sequence of commands, are in
the High Voltage operational state. High Voltage
commands allow the device’s WiperLock Technology
and write protect features to be enabled and disabled.
The HVC pin has an internal resistor connection to the
MCP45XX/46XXs internal VDD signal.
Note:
Writes to certain memory locations will be
dependant on the state of the WiperLock
Technology bits and the Write Protect bit.
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