Voltage on V
參數(shù)資料
型號: MCP4441-503E/ST
廠商: Microchip Technology
文件頁數(shù): 24/100頁
文件大小: 0K
描述: IC DGTL POT 129TAPS QUAD 20TSSOP
標(biāo)準(zhǔn)包裝: 74
接片: 129
電阻(歐姆): 50k
電路數(shù): 4
溫度系數(shù): 標(biāo)準(zhǔn)值 150 ppm/°C
存儲器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 20-TSSOP
包裝: 管件
2010 Microchip Technology Inc.
DS22265A-page 3
MCP444X/446X
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Voltage on VDD with respect to VSS ................ -0.6V to +7.0V
Voltage on HVC/A0, A1, SCL, SDA, WP, and
RESET with respect to VSS ................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, and PxB)
with respect to VSS ......................................... -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin ed
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
..................................................................... -40°C to +125°C
Package power dissipation (TA = +50°C, TJ = +150°C)
TSSOP-14....................................................... 1000 mW
TSSOP-20....................................................... 1110 mW
QFN-20 (4x4) .................................................. 2320 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins
................................... ≥ 4 kV (HBM),
..........................................................................
≥ 300V (MM)
Maximum Junction Temperature (TJ) .........................+150°C
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
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