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參數(shù)資料
| 型號(hào)： | MCM72F7ADG10 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 512KB and 1MB Synchronous Fast Static RAM Module |
| 中文描述： | 128K X 72 MULTI DEVICE SRAM MODULE, 10 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | MCM72F7ADG10 |
MCM72F6A
MCM72F7A
6
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
Vin, Vout
Iout
PD
– 0.5 to + 4.6
V
Voltage Relative to VSS
Output Current (per I/O)
– 0.5 to + 6.0
V
±
20
mA
Power Dissipation
MCM72F6A
MCM72F7A
4.6
9.2
W
Temperature Under Bias
Tbias
Tstg
– 10 to + 85
°
C
Storage Temperature
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
VIH
VIL
3.135
3.6
V
Input High Voltage
2.0
5.5**
V
Input Low Voltage
– 0.5*
0.8
V
*VIL
≥
– 2.0 V for t
≤
tKHKH/2.
**VIH
≤
6 V for tKHKH/2.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (0 V
≤
Vin
≤
VDD)
Output Leakage Current (0 V
≤
Vin
≤
VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
AC Supply Current (Device Selected, All Outputs Open,
Cycle Time
≥
tKHKH min)
MCM72F6ADG9
MCM72F6ADG10
MCM72F6ADG12
MCM72F7ADG9
MCM72F7ADG10
MCM72F7ADG12
IDDA
—
900
860
840
1800
1720
1680
mA
CMOS Standby Supply Current (Deselected,
Clock (K) Cycle Time
≥
tKHKH, All Inputs Toggling at
CMOS Levels Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
MCM72F6ADG9
MCM72F6ADG10
MCM72F6ADG12
MCM72F7ADG9
MCM72F7ADG10
MCM72F7ADG912
ISB1
—
440
400
380
880
800
760
mA
Clock Running Supply Current (Deselected,
Clock (K) Cycle Time
≥
tKHKH, All Other Inputs
Held to Static CMOS Levels Vin
≤
VSS + 0.2 V
or
≥
VDD – 0.2 V)
MCM72F6ADG9
MCM72F6ADG10/12
MCM72F7ADG9
MCM72F7ADG10/12
ISB2
—
160
140
320
280
mA
MCM72F6A CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
W, K
Other Inputs
Cin
—
—
16
36
pF
I/O Capacitance
CI/O
—
19
pF
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum
rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
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