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參數(shù)資料
| 型號： | MCH6412 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | MCH6412 |
MCH6412
No. A0448-1/4
Features
Low ON-resistance.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
5A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
4.4
7.4
S
RDS(on)1
ID=3A, VGS=4V
31
41
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1.5A, VGS=2.5V
40
57
m
RDS(on)3
ID=0.3A, VGS=1.8V
55
90
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
790
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
125
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16.5
ns
Rise Time
tr
See specified Test Circuit.
78
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
77
ns
Fall Time
tf
See specified Test Circuit.
125
ns
Marking : KL
Continued on next page.
Ordering number : ENA0448
82306 / 62006PE MS IM TB-00002099
MCH6412
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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參數(shù)描述 |
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| MCH6412-TL-E | 功能描述:MOSFET N-CH 30V 5A MCPH6 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MCH6415-TL-E | 制造商:SANYO 功能描述:Nch 20V 4A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 4A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6421 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421-TL-E | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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