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參數(shù)資料
| 型號： | MCH6408 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 20 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | MCH6408 |
MCH6408
No.7286-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7286
MCH6408
Package Dimensions
unit : mm
2193A
[MCH6408]
O1002 TS IM TA-100238
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
5A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
4.5
6.5
S
RDS(on)1
ID=3A, VGS=4V
25
33
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1.5A, VGS=2.5V
35
50
m
Marking : KH
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
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PDF描述 |
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| MCH6408 | 5 A, 20 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MCH6413 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6413 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| MCH6408-TL-E | 制造商:SANYO 功能描述:Nch 20V 5A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 5A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6412-TL-E | 功能描述:MOSFET N-CH 30V 5A MCPH6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MCH6415-TL-E | 制造商:SANYO 功能描述:Nch 20V 4A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 4A SC-82 制造商:Sanyo 功能描述:0 |
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