- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224201 > MCH5836 (SANYO SEMICONDUCTOR CO LTD) 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MCH5836 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 66K |
| 代理商： | MCH5836 |
MCH5836
No. A0780-2/6
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
1A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
3
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100μA
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--500mA
0.72
1.2
S
RDS(on)1
ID=--500mA, VGS=--4V
380
500
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--300mA, VGS=--2.5V
540
760
mΩ
RDS(on)3
ID=--100mA, VGS=--1.8V
670
1000
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
115
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
23
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
See specified Test Circuit.
6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
15
ns
Fall Time
tf
See specified Test Circuit.
7
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--1A
1.5
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--1A
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--1A
0.3
nC
Diode Forward Voltage
VSD
IS=--1A, VGS=0V
--0.89
--1.2
V
[SBD]
Reverse Voltage
VR
15
V
Forward Voltage
VF1IF=0.3A
0.3
0.33
V
VF2IF=0.5A
0.33
0.36
V
Reverse Current
IR
VR=6V
90
μA
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm (typ)
7021A-008
54
13
2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
54
12
3
54
12
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6337 | 4.5 A, 20 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MCH6436 | 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6544 | 500 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MCH6653 | 100 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH908JW32FC | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, QCC48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5837 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| MCH5837-TL-E | 功能描述:MOSFET N-CH/DIODE SCHOTTKY MCPH5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MCH5839-TL-H | 制造商:ON Semiconductor 功能描述:PCH+SBD 1.8V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+SBD 1.8V DRIVE SERIES |
| MCH5908 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications |
| MCH5908_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifi er, AM Amplifier, Low-Frequency Amplifier Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。