- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄181612 > MCH5815 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MCH5815 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | MCH5815 |
MCH5815
No.7424-1/5
Features
Composite type with a P-Channel Sillicon MOSFET
(MCH3317) and a Schottky Barrier Diode (SBS007M)
contained in one package facilitating high-density
mounting.
[MOS]
1) Low ON-resistance.
2) Ultrahigh-speed switching.
3) 1.8V drive.
[SBD]
1) Short reverse recovery time.
2) Low forward voltage.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7424
MCH5815
Package Dimensions
unit : mm
2195
[MCH5815]
32603 TS IM TA3841
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
--12
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
--1.5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--6.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
--150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
0.5
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
3
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QR
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
0.25
0.07
2.1
1.6
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
(Bottom view)
(Top view)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH5824 | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5826 | 1800 mA, 15 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6401 | 4 A, 20 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MCH6428 | 5 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MCH6437TL | 7 A, 20 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5815-TL-E | 制造商:SANYO 功能描述:Pch+SBD 12V 1.5A MCPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH SCHOT DIODE SC-82 制造商:Sanyo 功能描述:0 |
| MCH5818 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| MCH5819 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:MCH5819 |
| MCH5819-TL-E | 制造商:SANYO 功能描述:Nch+SBD 30V 1.4A 0.3 MCPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 制造商:Sanyo 功能描述:0 |
| MCH5823 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。