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參數(shù)資料
| 型號： | MCH6401 |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 20 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | MCH6401 |
MCH6401
No.6779-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6779
MCH6401
Package Dimensions
unit : mm
2193
[MCH6401]
N1500 TS IM TA-2907
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0.25
2.1
1.6
2.0
0.65
0.3
0.85
0.15
13
2
64
5
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
4A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
16
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=2A
4.3
6.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2A, VGS=4V
45
59
m
RDS(on)2
ID=1A, VGS=2.5V
60
84
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
370
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
80
pF
Marking : KA
Continued on next page.
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