- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95923 > MCH5809 (SANYO SEMICONDUCTOR CO LTD) 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MCH5809 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | MCH5809 |
MCH5809
No.7525-4/5
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Ambient Tamperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
VGS -- Qg
PD -- Ta
A S O
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT06110
0
20
40
0.2
0.4
0.6
0.8
1.0
60
80
100
120
140
160
IT06112
2
3
5
7
1.0
0.1
2
3
5
7
0.01
2
3
5
7
10
1.0
23
5 7 10
0.1
23
5 7
0.01
23
5 7
23
5
IT06111
VDS=10V
ID=1.5A
Mounted
on
a ceramic
board(900mm
2!
0.8mm)
1unit
[SBD]
(3)
(4)
(1)
1.0
10
2
7
5
100
10
7
2
3
35
7
2
3
Reverse Voltage, VR -- V
C -- VR
Interterminal
Capacitance,
C
--
pF
f=1MHz
0
100
10
1.0
0.1
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
30
15
25
520
10
Reverse Voltage, VR -- V
IR -- VR
Reverse
Current,
I
R
-
mA
0
0.1
0.2
0.3
0.4
0.3
0.35
0.25
0.2
0.1
0.05
0.15
0.5
0.6
0.7
Average Forward Current, IO -- A
PF(AV) -- IO
A
verage
Forward
Power
Dissipation,
P
F
(A
V)
-
W
0
0.1
0.01
0.4
0.2
1.0
2
7
5
3
2
7
5
3
2
0.6
Diode Forward Voltage, VF -- V
Forward
Current,
I
F
--
A
IF -- VF
Ta=125
°C
25
°C
100
°C
Ta=125
°C
25°C
50°C
75°C
100°C
IT05808
IT00633
IT00634
IT05809
50
°C
75
°C
180
°
360
°
θ
360
°
Rectangular wave
Sine wave
(1) Rectangular wave
θ=60°
(2) Rectangular wave
θ=120°
(3) Rectangular wave
θ=180°
(4) Sine wave
θ=180°
(2)
A S O
<10
s
IDP=6A
ID=1.5A
100
s
1ms
10ms
100ms
DC
operation
Operation in this
area is limited by RDS(on).
Ta=25
°C
Single pulse
Mounted on a ceramic board(900mm2!0.8mm) 1unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH5810 | 400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5818 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5818 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5809-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5810 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications |
| MCH5811 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| MCH5811-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5812 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。