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參數(shù)資料
| 型號(hào)： | MCH5801 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH3, 5 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MCH5801 |
MCH5801
No.6941-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.9
2.8
S
RDS(on)1
ID=1A, VGS=4V
160
210
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
200
280
m
RDS(on)3
ID=0.1A, VGS=1.8V
280
390
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
100
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
6.5
ns
Rise Time
tr
See specified Test Circuit
28
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
19
ns
Fall Time
tf
See specified Test Circuit
13
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.5A
4.5
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.5A
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.5A
0.4
nC
Diode Forward Voltage
VSD
IS=1.5A, VGS=0
0.9
1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
15
V
Forward Voltage
VF1IF=0.3A
0.35
0.40
V
VF2IF=0.5A
0.40
0.45
V
Reverse Current
IR
VR=6V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz, 1 cycle
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Electrical Connection (Top view)
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
MCH5801
VIN
4V
0V
VIN
Duty
≤10%
50
100
10
--5V
trr
100mA
10mA
10
s
12
3
54
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
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