參數(shù)資料
型號: MCF5327
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Microprocessor Data Sheet
中文描述: 微處理器數(shù)據(jù)表
文件頁數(shù): 17/48頁
文件大?。?/td> 922K
代理商: MCF5327
Preliminary Electrical Characteristics
MCF5329 ColdFire
Microprocessor Data Sheet, Rev. 0.1
Preliminary
Freescale Semiconductor
17
For most applications P
I/O
< P
INT
and can be ignored. An approximate relationship between P
D
and T
J
(if
P
I/O
is neglected) is:
Eqn. 2
Solving equations 1 and 2 for K gives:
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from
Equation 3
by measuring
P
D
(at equilibrium) for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by
solving
Equation 1
and
Equation 2
iteratively for any value of T
A
.
5.3
ESD Protection
5.4
DC Electrical Specifications
Table 6. ESD Protection Characteristics
1,
2
NOTES:
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
Table 7. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Core Supply Voltage
IV
DD
1.4
1.6
V
PLL Supply Voltage
PLLV
DD
1.4
1.6
V
CMOS Pad Supply Voltage
EV
DD
3.0
3.6
V
Mobile DDR/Bus Pad Supply Voltage
SDV
DD
1.65
1.95
V
DDR/Bus Pad Supply Voltage
SDV
DD
2.25
2.75
V
SDR/Bus Pad Supply Voltage
SDV
DD
3.0
3.6
V
USB Supply Voltage
USBV
DD
3.0
3.6
V
CMOS Input High Voltage
EV
IH
2
EV
DD
+ 0.05
V
CMOS Input Low Voltage
EV
IL
-0.05
0.8
V
Mobile DDR/Bus Input High Voltage
SDV
IH
TBD
SDV
DD
+ 0.05
V
Mobile DDR/Bus Input Low Voltage
SDV
IL
-0.05
TBD
V
DDR/Bus Input High Voltage
SDV
IH
2
SDV
DD
+ 0.05
V
DDR/Bus Input Low Voltage
SDV
IL
-0.05
0.8
V
P
D
273
°
C
T
J
+
)
-------------K
=
K
P
D
T
A
273
°
C
×
(
)
Q
JMA
P
D
2
×
+
×
=
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