參數(shù)資料
型號： MC9S08QE64CQD
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP44
封裝： 10 X 10 MM, 2 MM, HEIGHT, 0.80 MM PITCH, QFP-44
文件頁數(shù)： 27/52頁
文件大?。?/td> 834K
代理商： MC9S08QE64CQD
Electrical Characteristics
MC9S08QE128 Series Advance Information Data Sheet, Rev. 3
Freescale Semiconductor
33
3.10.6
Flash Specications
This section provides details about program/erase times and program-erase endurance for the ash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section of the
MC9S08QE128 Reference Manual.
3.11
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a signicant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specically targeted at optimizing EMC
performance.
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85°CVprog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
μs
P
Byte program time (random location)(2)
tprog
9tFcyc
P
Byte program time (burst mode)(2)
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time(2)
tMass
20,000
tFcyc
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4—
mA
Page erase current3
RIDDPE
—6—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4 Typical endurance for ash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale denes typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale denes typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
相關(guān)PDF資料
PDF描述
MC9S08QE96CLH 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP64
MC9S08QE128CFT 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, QCC48
MC9S08QE64CLH 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP64
MC9S08QE128CLD 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP44
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