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參數(shù)資料
| 型號： | MC9S08QB8CGK |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, BCC24 |
| 封裝： | 5 X 5 MM, 1 MM HEIGHT, 0.65 MM PITCH, ROHS COMPLIANT, MO-220VHHC-1, QFN-24 |
| 文件頁數(shù)： | 17/36頁 |
| 文件大小： | 1331K |
| 代理商： | MC9S08QB8CGK |
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MC9S08QB8 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
24
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the memory section.
3.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
Table 17. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85°CV
prog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
D
Byte program time (random location)(2)
tprog
9tFcyc
D
Byte program time (burst mode)(2)
tBurst
4tFcyc
D
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
D
Mass erase time(2)
tMass
20,000
tFcyc
D
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
D
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
—
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9S08QB8CGK | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 20MHZ QFN-24 |
| MC9S08QB8CTG | 功能描述:8位微控制器 -MCU S08 8K FLASH QB8 TSSOP16 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08QB8CTGR | 功能描述:8位微控制器 -MCU S08 8K FLASH QB8 TSSOP16 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08QB8CWL | 功能描述:8位微控制器 -MCU S08 8K FLASH QB8 SOIC28 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08QB8CWL | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 20MHZ WSOIC-28 |
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