參數(shù)資料
型號: MC9328MX21VM
廠商: Freescale Semiconductor
文件頁數(shù): 57/100頁
文件大?。?/td> 0K
描述: IC MCU I.MX21 266MHZ 289-MAPBGA
標(biāo)準(zhǔn)包裝: 90
系列: i.MX21
核心處理器: ARM9
芯體尺寸: 32-位
速度: 266MHz
連通性: 1 線,EBI/EMI,I²C,IrDA,MMC,智能卡,SPI,SSI,UART/USART,USB OTG
外圍設(shè)備: DMA,I²S,LCD,POR,PWM,WDT
輸入/輸出數(shù): 192
程序存儲器類型: ROMless
電壓 - 電源 (Vcc/Vdd): 1.45 V ~ 3.3 V
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 289-LFBGA
包裝: 托盤
MC9328MX21 Technical Data, Rev. 3.4
6
Freescale Semiconductor
Signal Descriptions
EB1
Byte Strobe—Active low external enable byte signal that controls D [23:16], shared with SDRAM DQM1.
EB2
Byte Strobe—Active low external enable byte signal that controls D [15:8], shared with SDRAM DQM2
and PCMCIA PC_REG.
EB3
LSB Byte Strobe—Active low external enable byte signal that controls D [7:0], shared with SDRAM
DQM3 and PCMCIA PC_IORD.
OE
Memory Output Enable—Active low output enables external data bus, shared with PCMCIA PC_IOWR.
CS [5:0]
Chip Select—The chip select signals CS [3:2] are multiplexed with CSD [1:0] and are selected by the
Function Multiplexing Control Register (FMCR) in the System Control chapter. By default CSD [1:0] is
selected. DTACK is multiplexed with CS4.
ECB
Active low input signal sent by flash device to the EIM whenever the flash device must terminate an on-
going burst sequence and initiate a new (long first access) burst sequence.
LBA
Active low signal sent by flash device causing the external burst device to latch the starting burst
address.
BCLK
Clock signal sent to external synchronous memories (such as burst flash) during burst mode.
RW
RW signal—Indicates whether external access is a read (high) or write (low) cycle. This signal is also
shared with the PCMCIA PC_WE.
DTACK
DTACK signal—External input data acknowledge signal, multiplexed with CS4.
Bootstrap
BOOT [3:0]
System Boot Mode Select—The operational system boot mode upon system reset is determined by the
settings of these pins. To hardwire these inputs low, terminate with a 1 KΩ resister to ground. For a logic
high, terminate with a 1 KΩ resistor to VDDA. Do not change the state of these inputs after power-up.
Boot 3 should always be tied to logic low.
SDRAM Controller
SDBA [4:0]
SDRAM non-interleave mode bank address signals. These signals are multiplexed with address signals
A[20:16].
SDIBA [3:0]
SDRAM interleave addressing mode bank address signals. These signals are multiplexed with address
signals A[24:21].
MA [11:0]
SDRAM address signals. MA[9:0] are multiplexed with address signals A[10:1].
DQM [3:0]
SDRAM data qualifier mask multiplexed with EB[3:0]. DQM3 corresponds to D[31:24], DQM2
corresponds to D[23:16], DQM1 corresponds to D[15:8], and DQM0 corresponds to D[7:0].
CSD0
SDRAM Chip Select signal. This signal is multiplexed with the CS2 signal. This signal is selectable by
programming the Function Multiplexing Control Register in the System Control chapter.
CSD1
SDRAM Chip Select signal. This signal is multiplexed with the CS3 signal. This signal is selectable by
programming the Function Multiplexing Control Register in the System Control chapter.
RAS
SDRAM Row Address Select signal.
CAS
SDRAM Column Address Select signal
SDWE
SDRAM Write Enable signal
SDCKE0
SDRAM Clock Enable 0
SDCKE1
SDRAM Clock Enable 1
SDCLK
SDRAM Clock
Table 2. i.MX21 Signal Descriptions (Continued)
Signal Name
Function/Notes
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