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| 型號(hào)： | MC80C32-12SBD |
| 廠商： | TEMIC SEMICONDUCTORS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, 12 MHz, MICROCONTROLLER, CDIP40 |
| 文件頁(yè)數(shù)： | 123/326頁(yè) |
| 文件大?。?/td> | 3228K |
| 代理商： | MC80C32-12SBD |
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21
7734Q–AVR–02/12
AT90PWM81/161
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
When the write access time has elapsed, the EEWE bit is cleared by hardware. The user soft-
ware can poll this bit and wait for a zero before writing the next byte. When EEWE has been set,
the CPU is halted for two cycles before the next instruction is executed.
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct
address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed.
The user should poll the EEWE bit before starting the read operation. If a write operation is in
progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.
The calibrated Oscillator is used to time the EEPROM accesses. Table 4-2 lists the typical pro-
gramming time for EEPROM access from the CPU.
4.3.5
Program multiple bytes in one Atomic operation
It is possible to write multiple bytes into the EEPROM. Before initiating a programming
(erase/write), the data to be written has to be loaded into the temporary EEPROM page buffer.
Writing EEPAGE to one enables a load operation.
When EEPAGE bit is written to one, the temporary EEPROM page buffer is ready for loading. To
load data into the temporary EEPROM page buffer, the address and data must be written into
EEARL and EEDR respectively. Note that the data is loaded when EEDR is updated. Therefore,
the address must be written before data. This operation is repeated until the temporary
EEPROM page buffer is filled up or until all data to be written have been loaded. The number of
bytes that is loaded must not exceed the temporary EEPROM page size before performing a
program operation. Note that it is not possible to write more than one time to each byte in the
temporary EEPROM page buffer before executing a program operation. If the same byte is writ-
ten multiple times, the content in the temporary EEPROM page will be bit wise AND between the
written data (that is, if 0xaa and 0x55 is loaded to the same byte, the result will be 0x00). The
temporary EEPROM buffer will be ready for new data after the program operation has com-
pleted. Alternatively, the temporary EEPROM buffer is flushed and ready for new data by writing
EEPE (within four cycles after EEMPE is written) if the EEPMn bits are 0b11. When the tempo-
rary EEPROM buffer is flushed, the EEPAGE bit will be cleared. Loading data into the temporary
EEPROM buffer takes three CPU clock cycles. If EEDR is written while EEPAGE is set, the CPU
is halted to ensure that the operation takes three cycles.
Table 4-2.
EEPROM programming time.
Symbol
Number of calibrated RC oscillator cycles
Typical programming time
EEPROM write
(from CPU)
26368
3.3ms
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