DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Symbol Unit " />
參數(shù)資料
型號(hào): MC74HCT366ADR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 0K
描述: IC BUFFER INV HEX 3ST 16-SOIC
標(biāo)準(zhǔn)包裝: 2,500
系列: 74HCT
邏輯類型: 逆變器,緩沖器
電路數(shù): 6
輸入數(shù): 1
特點(diǎn): 三態(tài)
電源電壓: 2 V ~ 6 V
電流 - 靜態(tài)(最大值): 4µA
輸出電流高,低: 7.8mA,7.8mA
邏輯電平 - 低: 0.8V
邏輯電平 - 高: 2V
額定電壓和最大 CL 時(shí)的最大傳播延遲: 20ns @ 6V,50pF
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 16-SOIC
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
包裝: 帶卷 (TR)
MC74HCT366A
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Unit
Guaranteed Limit
VCC
V
Test Conditions
Parameter
Symbol
Unit
v 125_C
v 85_C
– 55 to
25_C
VCC
V
Test Conditions
Parameter
IOZ
Maximum ThreeState
Leakage Current
Output in HighImpedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
6.0
4
40
160
μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
Parameter
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
120
60
24
20
150
75
30
26
180
90
36
31
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
Cin
Maximum Input Capacitance
10
pF
Cout
Maximum ThreeState Output Capacitance
(Output in HighImpedance State)
15
pF
CPD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, VCC = 5.0 V
pF
60
* Used to determine the noload dynamic power consumption: PD = CPD VCC2f + ICC VCC.
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