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參數(shù)資料
| 型號： | MC33797 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Four Channel Squib Driver IC |
| 中文描述： | 四通道爆管驅(qū)動IC |
| 文件頁數(shù)： | 30/32頁 |
| 文件大小： | 639K |
| 代理商： | MC33797 |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33797
STATIC ELECTRICAL CHARACTERISTICS
VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXA terminal, with High Side Safing Sensor Diagnostic active
IRRE
260
350
400
A
VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXB terminal, with High Side Safing Sensor Diagnostic active
IRRE
22
32
55
A
VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5)
Either VFIRE!B or VFIRE2B Diagnostic active
IRRE
0.3
2.0
3.8
mA
VFIRE Quiescent Current - Total
All VFIRE terminals measured together, with Diagnostics Off
IQVFIRETOTAL
90
135
180
A
Maximum Allowable External Capacitance to Ground (10)
Per Squib terminal SQB_LO and SQB_HI
CSMAX
–
0.12
F
Maximum Allowable External Resistance to Ground During Firing (10)
VFIRE_RTN terminal to Ground
RSMAX
–
0.15
TSD
160
–
190
C
FET Driver Thermal Shutdown Re-Enable Threshold After Drive Cool-down
TREN
90
–
110
C
FET DRIVERS HIGH- AND LOW-SIDE DRIVER TRANSISTOR STATUS/DIAGNOSTICS ($82, $83 COMMANDS)
Voltage Transistor Test Threshold for High-Side Driver Transistor
VTRANTST1
5.5
6.0
6.5
V
High-Side Driver Current Limit During High-Side Driver Transistor
Diagnostics
15 V
≤ VVFIRE_XX ≤ 35 V
ITRANTST1
2.0
10
50
mA
Voltage Transistor Test Threshold for Low-Side Driver Transistor
VTRANTST2
1.0
1.4
2.0
V
Low-Side Driver Current Limit During Low-Side Driver Transistor
Diagnostics
15 V
≤ VVFIRE_XX ≤ 35 V
ITRANTST2
2.0
10
50
mA
FEN INPUT TERMINAL (FEN_1 AND FEN_2)
Internal Current Pull-Down
IFEN
-25
-40
-50
A
Logic Low Level
VFEN(LO)
0.0
2.5
0.35 x VDD
V
Fire Enable Terminal Logic High Level
VFEN(HI)
0.65 x VDD
2.5
1.0 x VDD
V
Notes
10.
Guaranteed by design.
11.
With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms.
The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib
driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is
exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the
arm/fire command when the TEMPRENABLE (MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15 ±0.15 .
Shorted squib load: 0.1
.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2
= VDD; RR_LIMIT_X =10k ±1%, RR_DIAG = 10 k ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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| MC33797BPEW | 功能描述:功率驅(qū)動器IC Four Channel Squib Dr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33797BPEWR2 | 功能描述:功率驅(qū)動器IC Four Channel Squib Dr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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| MC33813AER2 | 功能描述:功率驅(qū)動器IC 1 CYL SM ENG CONTROL IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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