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參數(shù)資料
| 型號： | MC14572UBF |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Hex Gate |
| 中文描述： | 4000/14000/40000 SERIES, HEX 1-INPUT INVERT GATE, PDSO16 |
| 封裝： | PLASTIC, EIAJ, SOP-16 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 158K |
| 代理商： | MC14572UBF |
MOTOROLA CMOS LOGIC DATA
Motorola, Inc. 1995
1
MC14572UB
The MC14572UB hex functional gate is constructed with MOS P–channel
and N–channel enhancement mode devices in a single monolithic structure.
These complementary MOS logic gates find primary use where low power
dissipation and/or high noise immunity is desired. The chip contains four
inverters, one NOR gate and one NAND gate.
Diode Protection on All Inputs
Single Supply Operation
Supply Voltage Range = 3.0 Vdc to 18 Vdc
NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter
NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter
NOR Output Pin Adjacent to Inverter Input Pin For OR Application
NAND Output Pin Adjacent to Inverter Input Pin For AND Application
Capable of Driving Two Low–power TTL Loads or One Low–Power
MAXIMUM RATINGS*
(Voltages Referenced to VSS)
Symbol
Parameter
VDD
DC Supply Voltage
Vin, Vout
Input or Output Voltage (DC or Transient)
Iin, Iout
Input or Output Current (DC or Transient),
per Pin
Value
Unit
– 0.5 to + 18.0
V
– 0.5 to VDD + 0.5
±
10
V
mA
PD
Tstg
TL
Power Dissipation, per Package
500
mW
Storage Temperature
– 65 to + 150
C
Lead Temperature (8–Second Soldering)
260
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C
CIRCUIT SCHEMATIC
VDD
VDD
VDD
2
7
6
1
5
14
15
13
VSS
VSS
VSS
SEMICONDUCTOR TECHNICAL DATA
REV 3
1/94
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXUBCP
MC14XXXUBCL
MC14XXXUBD
TA = – 55
°
to 125
°
C for all packages.
Plastic
Ceramic
SOIC
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
LOGIC DIAGRAM
15
14
12
10
7
6
4
2
13
11
9
5
3
1
VDD = PIN 16
VSS = PIN 8
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