參數(shù)資料
型號: MC-4R512FKE8D
廠商: Elpida Memory, Inc.
英文描述: Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
中文描述: RIMM的直接Rambus的內(nèi)存模塊512兆字節(jié)(256M字× 18位)
文件頁數(shù): 6/14頁
文件大?。?/td> 132K
代理商: MC-4R512FKE8D
Data Sheet
E0076N20 (Ver 2.0)
6
MC-4R512FKE8D
(2/2)
Signal
I/O
Type
Description
RSCK
I
V
CMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SV
DD
Serial Presence Detect Address 0.
SA1
I
SV
DD
Serial Presence Detect Address 1.
SA2
I
SV
DD
Serial Presence Detect Address 2.
SCL
I
SV
DD
Serial Presence Detect Clock.
SDA
I/O
SV
DD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SV
DD
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SV
DD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
V
CMOS
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
V
DD
Supply voltage for the RDRAM core and interface logic.
V
REF
Logic threshold reference voltage for RSL signals.
相關(guān)PDF資料
PDF描述
MC-4R512FKE8D-653 Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-745 Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R64CEE6B Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0.75 A; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
MC-4R64CEE6B-653 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
MC-4R64CEE6B-745 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC-4R512FKE8D-653 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-745 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-845 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKK6K 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module