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參數(shù)資料
| 型號： | MC-4R512FKE8D |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| 中文描述： | RIMM的直接Rambus的內(nèi)存模塊512兆字節(jié)（256M字× 18位） |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 132K |
| 代理商： | MC-4R512FKE8D |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
MC-4R512FKE8D
Direct Rambus DRAM RIMM
TM
Module
512M-BYTE (256M-WORD x 18-BIT)
DATA
SHEET
Document No. E0076N20 (Ver 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
NEC Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R512FKE8D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (
μ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
512 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 512 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4R512FKE8D-653 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-745 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R64CEE6B | Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0.75 A; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA |
| MC-4R64CEE6B-653 | Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA |
| MC-4R64CEE6B-745 | Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R512FKE8D-653 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-745 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKK6K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module |
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