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參數(shù)資料
| 型號(hào)： | MC-454CB64S |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 64-BIT Dynamic RAM Module(動(dòng)態(tài)RAM模塊) |
| 中文描述： | 分詞，64位動(dòng)態(tài)RAM模塊（動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 138K |
| 代理商： | MC-454CB64S |
The information in this document is subject to change without notice.
1997
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-454CB64S
4 M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M12386EJ7V0DS00 (7th edition)
Date Published August 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on
which 4 pieces of 64 M SDRAM:
μ
PD4564163 (Rev. E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
4,194,304 words by 64 bits organization
Clock frequency and Clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-454CB64S-A80
CL = 3
125
MHz
6
ns
2,808
mW
7.2
mW
CL = 2
100
MHz
6
ns
2,376 mW
(CMOS level input )
MC-454CB64S-A10
CL = 3
100 MHz
6
ns
2,376
mW
CL = 2
77 MHz
7
ns
1,872 mW
MC-454CB64S-A10B
CL = 3
100 MHz
7
ns
2,376
mW
CL = 2
67 MHz
8
ns
1,584 mW
MC-454CB64S-A10BL
CL = 3
100MHz
7ns
2,376 mW
CL = 2
67MHz
8ns
1,584 mW
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