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參數(shù)資料
| 型號： | MBRH2045CT |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 143K |
| 代理商： | MBRH2045CT |
MBRH2045CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 45 Volts
FORWARD CURRENT
– 20 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capability
Plastic package has UL flammability classification
94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: TO-220AB molded plastic
Polarity : As marked on the body
Weight: 0.08 ounces, 2.24 grams
Mounting position: Any
Max. mounting torque=0.5 N.m(5.1 Kgf.cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
MBRH2045CT
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
45
V
Maximum RMS Voltage
VRMS
31
V
Maximum DC Blocking Voltage
VDC
45
V
Average Rectified Output Current
@TC=130°C
IF
10
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
180
A
Maximum Forward Voltage
Note(1)
IF=10A@
IF=20A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VF
0.69
0.57
0.84
0.72
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage per element
Tj=25°C
Tj=125°C
IR
10
20
uA
mA
Typical Junction Capacitance per element (2)
CJ
435
PF
Typical thermal resistance Junction to Case (3)
RΘJC
3.0
°C/W
Operating junction temperature range
TJ
-55 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
Note :
REV. 1, Cct-2010, KTHC84
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3)
Thermal Resistance Junction to Case, device mounted on 50 x 50 x 2mm_copper pad heat sink,
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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