參數(shù)資料
型號(hào): MBRM140T3
廠商: MOTOROLA INC
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, 40 V, SILICON, SIGNAL DIODE
文件頁數(shù): 1/4頁
文件大?。?/td> 138K
代理商: MBRM140T3
1
Rectifier Device Data
Advance Information
Surface Mount
Schottky Power Rectifier
POWERMITE Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal
and epitaxial construction that produces optimal forward voltage drop–reverse current
tradeoff. The advanced packaging techniques provide for a highly efficient micro
miniature, space saving surface mount Rectifier. With its unique heatsink design, the
Powermite has the same thermal performance as the SMA while being 50% smaller in
footprint area, and delivering one of the lowest height profiles,
< 1.1 mm in the industry.
Because of its small size, it is ideal for use in portable and battery powered products such
as cellular and cordless phones, chargers, notebook computers, printers, PDAs and
PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other application where
performance and size are critical.
Features:
Low Profile — Maximum Height of 1.1 mm
Small Footprint — Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel — 12,000 Units per Reel
Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
Mechanical Characteristics:
Powermite is JEDEC Registered as D0–216AA
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8″
Weight: 62 mg (approximately)
Device Marking: BCJ
Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current (At Rated VR, TC = 110°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110°C)
IFRM
2.0
A
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Tstg
–55 to 150
°C
Operating Junction Temperature
TJ
–55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (1)
Thermal Resistance – Junction–to–Tab (Cathode) (1)
Thermal Resistance – Junction–to–Ambient (1)
Rtjl
Rtjtab
Rtja
35
23
277
°C/W
(1) Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
POWERMITE is a registered trademark of MicroSemi Corporation
Motorola, Inc. 1998
Order this document
by MBRM140T3/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBRM140T3
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
CASE 457–04
ISSUE C
CATHODE
ANODE
Rev 1
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