參數(shù)資料
型號: MBRF30100CT
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 整流器
英文描述: 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 150K
代理商: MBRF30100CT
MBRF30100CT
SCHOTTKY BARRIER RECTIFIER
REVERSE VOLTAGE – 100Volts
FORWARD CURRENT – 30 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Low forward voltage drop
High efficiency
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case Material: Plastic material, UL flammability
classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating
Polarity indicator: As marked on the body
Weight: 0.06 ounces, 1.70 grams
Component in accordance to RoHs 2002/95/EC
ESD capability : HBM_8KV (JESD22-A114)
Maximum mounting torque = 0.5 N.m (5.1 Kgf.cm)
ITO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
MBRF30100CT
UNIT
Device marking code
Note
MBRF30100CT
---
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Output Current @δ=0.5
(FIG.1_per diode)
IF
30
A
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM
250
A
Storage temperature range
TSTG
-55 to +175
°C
Operating junction temperature range
TJ
-55 to +175
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Min.
Typ.
Max.
UNIT
Breakdown voltage
IR=0.1mA
Tj=25°C
VB
100
---
V
IF=15A
Tj=25°C
Tj=125°C
---
0.75
0.62
0.80
0.67
Forward Voltage (1)
IF=30A
Tj=25°C
VF
---
0.93
V
Leakage Current
VR=100V
Tj=25°C
Tj=125°C
IR
---
0.001
0.5
0.1
10
mA
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical thermal resistance_Junction to Case (2)
RΘJC
3.5
°C/W
Typical thermal resistance_Junction to Lead (2)
RΘJL
3.5
°C/W
Note :
REV. 3. Oct-2010, KTHC59
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Thermal Resistance test performed in accordance with JESD-51. RΘJL is measured at the PIN 2, RΘJC
is measured at the top centre of body.
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