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參數(shù)資料
| 型號： | MBRF20100CT |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MBRF20100CT |
MBRF2070CT thru
20100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
MBRF2070CT
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
TC =120 C
MBRF2080CT
80
56
80
MBRF2090CT
90
63
90
MBRF20100CT
100
70
100
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 20 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm x 135 mm x 8mm Aluminum Plate Heatsink
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SEMICONDUCTOR
LITE-ON
REV. 4, Oct-2010, KTHC24
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
R0JC
2.0
C/W
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
100
mA
Maximum Forward
Voltage (Note 1)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
V/us
0.75
0.85
0.95
Typical Junction Capacitance
per element (Note 3)
CJ
350
pF
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
PIN 1
PIN 3
PIN 2
IRRM
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
1
A
@TJ
=25 C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF2090CT-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20100CT-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20100CT-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H100CT-E3 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H150CT-E3/45 | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF20100CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF20100CT_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF20100CT-4W | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Trench MOS Schottky technology |
| MBRF20100CT-E3 | 制造商:Vishay Semiconductors 功能描述:Rectifier; ITO-220AB; 0.95 V; 10000 |
| MBRF20100CT-E3/45 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER CMN CTHD 20A ITO220AB 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER CMN CTHD 20A ITO220AB; Diode Type:Schottky; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Forward Voltage VF Max:800mV; Diode Case Style:TO-220AB ;RoHS Compliant: Yes |
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