參數(shù)資料
型號(hào): MBR20100CT-HE3/45
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/5頁
文件大?。?/td> 143K
代理商: MBR20100CT-HE3/45
Vishay General Semiconductor
MBR(F,B)2090CT & MBR(F,B)20100CT
Document Number 88672
18-Aug-06
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
Tj max
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR2090CT
MBR20100CT
ITO-220AB
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
1
2
3
MBRF2090CT
MBRF20100CT
PIN 2
PIN 1
PIN 3
TO-263AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
Total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
相關(guān)PDF資料
PDF描述
MBRF20H100CT-E3 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF20H150CT-E3/45 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
SB20H150CT-1E3/45 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA
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