參數(shù)資料
型號(hào): MBRB30H100CT-E3/31
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 2/5頁
文件大?。?/td> 151K
代理商: MBRB30H100CT-E3/31
www.vishay.com
2
Document Number 88791
22-Aug-06
Vishay General Semiconductor
MBR30H90CT & MBR30H100CT
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward
voltage per diode (1)
at IF = 15 A,
at IF = 30 A,
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
0.82
0.67
0.93
0.80
V
Maximum reverse current per diode at
working peak reverse voltage (1)
Tj = 25 °C
Tj = 125 °C
IR
5.0
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
1.9
4.6
1.9
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H100CT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
MBRF30H100CT-E3/45
1.99
45
50/Tube
Tube
TO-263AB
MBRB30H100CT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
MBRB30H100CT-E3/81
1.35
81
800/Reel
Tape Reel
Figure 1. Forward Derating Curve Per Diode
0
5
10
15
20
25
30
35
75
50
25
0
100
125
150
175
MBRF30H90CT - MBRF30H100CT
MBR30H90CT - MBR30H100CT
MBRB30H90CT - MBRB30H100CT
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
200
250
300
1
10
100
Tj = Tj max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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