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參數(shù)資料
| 型號： | MBRD10U100CT |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | DPAK(1), 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MBRD10U100CT |
2010. 10. 8
1/2
SEMICONDUCTOR
TECHNICAL DATA
MBRD10U100CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
Average Output Rectified Current
: IO=10A.
Repetitive Peak Reverse Voltage
: VRRM=100V.
Low Reverse Current.
MAXIMUM RATING (Ta=25
)
DPAK (1)
DIM MILLIMETERS
A
B
C
D
F
FF
H
G
K
G
J
L
K
L
M
0.96 MAX
0.90 MAX
E
M
N
H
0.70 MIN
N
12
3
6.60 0.20
+_
6.10 0.20
+_
5.34 0.30
+_
0.70 0.20
+_
2.70 0.15
+_
2.30 0.10
+_
1.80 0.20
+_
0.50 0.10
+_
2.30 0.10
+_
0.50 0.10
+_
J
1. N.C.
2. CATHODE
3. ANODE
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
(Note)
VFM
IFM=5A
-
0.85
V
Repetitive Peak
Reverse Current
(Note)
IRRM
VRRM=100V
-
2
50
A
Thermal Resistance
(Note)
Rth(j-c)
Juction to Case
-
6.0
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Output Rectified
Current (Tc=114
) (Note)
IO
10
A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
45
A
Junction Temperature
Tj
-40
150
Storage Temperature Range
Tstg
-55
150
Note : average forward current of centertap full wave connection.
Note : A value of one cell
3
1
2
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