- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95883 > MBRA120TRPBF (VISHAY INTERTECHNOLOGY INC) 1 A, 20 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號： | MBRA120TRPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, SIMILAR TO D-64, SMA, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 82K |
| 代理商： | MBRA120TRPBF |
Document Number: 94300
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 04-Mar-10
3
VS-MBRA120TRPbF
Schottky Rectifier, 1.0 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D);
0.1
1
10
I F
-
Instantaneous
Forward
Current
(A)
VFM - Forward Voltage Drop (V)
0.2
0.4
0.6
0.8
1.0
0
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 25 °C
0.0001
0.1
1
10
0.01
0.001
100
I R
-Reverse
Current
(mA)
VR - Reverse Voltage (V)
10
515
20
0
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 75 °C
T
J = 50 °C
T
J = 25 °C
10
100
1000
C
T
-Junction
Capacitance
(pF)
VR - Reverse Voltage (V)
10
515
20
0
T
J = 25 °C
130
135
140
145
155
150
Allowable
Case
Temperature
(°C)
IF(AV) - Average Forward Current (A)
0.6
0.2
1.0
1.4
0.8
0.4
1.2
1.6
0
DC
See note (1)
Square wave
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.3
0.4
0.2
0.1
0.5
Average
Power
Loss
(W)
IF(AV) - Average Forward Current (A)
0.4
0.8
1.6
1.2
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
I FSM
-
Non-Repetitive
Surge
Current
(A)
tp - Square Wave Pulse Duration (s)
100
1000
10 000
10
T
J = 25 °C
At any rated load condition
and with rated V
RRM applied
following surge
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRA120TR | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TR | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120TRPBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRB10100CT-TP | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRB1060-G | 10 A, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRA120TRPBF_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1.0 A |
| MBRA130 | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| MBRA130LT3 | 功能描述:肖特基二極管與整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRA130LT3G | 功能描述:肖特基二極管與整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRA130LT3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier Breakdown Voltage Max |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。