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參數(shù)資料
| 型號(hào)： | MBRA120TRPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, SIMILAR TO D-64, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | MBRA120TRPBF |
www.vishay.com
For technical questions, contact: diodestech@vishay.com
Document Number: 94300
2
Revision: 04-Mar-10
VS-MBRA120TRPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
Maximum forward voltage drop
VFM (1)
1 A
TJ = 25 °C
0.42
0.45
V
2 A
0.46
0.52
1 A
TJ = 100 °C
0.33
0.37
2 A
0.39
0.45
1 A
TJ = 125 °C
0.30
0.35
2 A
0.36
0.43
Maximum reverse leakage current
IRM (1)
TJ = 25 °C
VR = Rated VR
0.015
0.2
mA
TJ = 100 °C
2.0
6.0
TJ = 125 °C
7.0
20
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
110
-
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
-
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 65 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
35
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
80
Approximate weight
0.07
g
0.002
oz.
Device marking
Case style SMA (similar D-64)
V12A
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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