- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄61664 > MBR60100CT-E3/45 (VISHAY SEMICONDUCTORS) 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MBR60100CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 84K |
| 代理商： | MBR60100CT-E3/45 |
New Product
MBR60100CT
Vishay General Semiconductor
Document Number: 88892
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A x 2
VRRM
100 V
IFSM
350 A
VF at IF = 30 A
0.64 V
TJ max.
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR60100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Working peak reverse voltage
VRWM
100
V
Maximum DC blocking voltage
VDC
100
V
Maximum average forward rectified current
total device
per diode
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
350
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 s waveform)
ERSM
25
mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.0 A, L = 40 mH
EAS
20
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| MBR650F | 6 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR690FCT | 6 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR730 | 7.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR745 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR740 | 7.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR60100PT | 功能描述:肖特基二極管與整流器 60A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR60100PT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 60A 3-Pin(3+Tab) TO-3P Tube |
| MBR60100PTE3/TU | 制造商:Microsemi Corporation 功能描述:60A, 100V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 60A 100V TO-247AD |
| MBR60100PT-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| MBR60100R | 功能描述:肖特基二極管與整流器 100V - 60A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。