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參數(shù)資料
| 型號： | MBR730 |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 7.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBR730 |
MBR730 thru MBR760
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR730
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
7.5
150
-
0.57
0.84
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
TJ =25 C
CJ
Typical Junction Capacitance (Note 3)
400
pF
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR )
TJ =125 C
dv/dt
10000
V/us
IF =7.5A @
IF =15A @
MBR735
35
24.5
35
MBR740
40
28
40
MBR745
45
31.5
45
MBR750
50
35
50
MBR760
60
42
60
V
0.75
0.65
-
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
0.5
50
Typical Thermal Resistance (Note 2)
3.5
C/W
R0JC
TJ =25 C
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 7.5 Amperes
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
TJ =125 C
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 4,Aug-2007, KTHA02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR745 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR740 | 7.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRA120PBF | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120 | 1 A, 20 V, SILICON, SIGNAL DIODE |
| MBRA120 | 1 A, 20 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR730_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:7.5A SCHOTTKY BARRIER RECTIFIER |
| MBR735 | 功能描述:肖特基二極管與整流器 7.5 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR735 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube |
| MBR735 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR735/45 | 功能描述:肖特基二極管與整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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