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參數(shù)資料
| 型號(hào)： | MBR350RL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | MBR350RL |
1
Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B350, B360
MAXIMUM RATINGS
Rating
Symbol
MBR350
MBR360
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
60
V
Average Rectified Forward Current, TA = 65°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 3)
IO
3.0
A
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C)
IFSM
80
A
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
TJ, Tstg
*65 to 150°C
°C
Peak Operating Junction Temperature
(Forward Current applied)
TJ(pk)
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
R
θJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
MBR350
MBR360
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
0.600
0.740
1.080
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
iR
0.60
20
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR350/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR350
MBR360
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
CASE 267–03
PLASTIC
MBR360 is a
Motorola Preferred Device
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR350RLG | 功能描述:肖特基二極管與整流器 3A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR350TR | 功能描述:DIODE SCHOTTKY 50V 3A C-16 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR350TR-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR351 | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| MBR3510 | 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS |
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