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參數(shù)資料
| 型號(hào)： | MBR3100RLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifier |
| 中文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 65K |
| 代理商： | MBR3100RLG |
MBR3100
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient (see Note 3, Mounting Method 3)
R
JA
28
°
C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 Amps, T
L
= 25
°
C)
(i
F
= 3.0 Amps, T
L
= 100
°
C)
v
F
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
T
L
= 25
°
C
T
L
= 100
°
C
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
i
R
0.6
20
mA
I
F (AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
0
2.0
1.0
3.0
4.0
5.0
0.5
1
1.5
2
2.5
P
F
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 3. Current Derating
(Mounting Method #3 per Note 3)
20
100
60
40
80
4
2
0
dc
120
140
160
180
I
F
V
R
REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0
20
10
30
40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.2
0.1
0.3 0.4 0.5
5
3
2
0.2
0.1
1
0.7
0.6
0.8 0.9
0.3
0.05
0.5
I
R
i
F
25
°
C
100
°
C
T
J
= 150
°
C
50
30
20
10
1
1.2 1.3
1.1
50
60
80
90
100
0.0001
0.0002
0.0005
25
°
C
70
100
°
C
T
J
= 150
°
C
125
°
C
1
3
5
6
7
8
3
3.5
4
dc
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
R
is sufficient below rated V
R
.
SQUARE
WAVE
SQUARE
WAVE
Figure 1. Typical Forward Voltage
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