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參數(shù)資料
| 型號： | MBR3100RLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifier |
| 中文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MBR3100RLG |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MBR3100/D
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in lowvoltage,
highfrequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
Low Forward Voltage
175
°
C Operating Junction Temperature
High Surge Capacity
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current T
= 100
°
C
(R
= 28
°
C/W, Refer to P.C. Board Mounting,
Note 3)
I
O
3.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Operating and Storage Junction Temperature
Range (Note 1) (Reverse Voltage Applied)
T
J
, T
stg
65 to
+175
°
C
Voltage Rate of Change (Rated V
R
)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10
V/ns
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 26705
(DO201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 100 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MBR3100
Axial Lead
500 Units / Bag
MBR3100RL
Axial Lead
1500/Tape & Reel
MARKING DIAGRAM
A
MBR
3100
YYWW
http://onsemi.com
MBR3100RLG
Axial Lead
(PbFree)
1500/Tape & Reel
MBR3100G
Axial Lead
(PbFree)
500 Units / Bag
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
YY
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
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