- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39586 > MBR3100RL (MOTOROLA INC) 3 A, 100 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | MBR3100RL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 77K |
| 代理商： | MBR3100RL |
1
Rectifier Device Data
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide passiva-
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
high–frequency inverters, free wheeling diodes, and polarity protection diodes.
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard–Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
High Surge Capacity
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part
number
Polarity: Cathode indicated by Polarity Band
Marking: B3100
MAXIMUM RATINGS
Rating
Symbol
MBR3100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current, TA = 100°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 1)
IO
3.0
A
Non–Repetitive Peak Surge Current (Surge applied at rated load
conditions, half wave, single phase, 60 Hz)
IFSM
150
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
TJ, Tstg
*65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10
V/ns
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(see Note 1, Mounting Method 3)
R
θJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage*
(iF = 3 Amps, TL = 25°C)
(iF = 3 Amps, TL = 100°C)
vF
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage*
(TL = 25°C)
(TL = 100°C)
iR
0.6
20
mA
*Pulse Test: Pulse Width = 300
s, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR3100/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR3100
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
100 VOLTS
CASE 267–03
PLASTIC
Motorola Preferred Device
相關PDF資料 |
PDF描述 |
|---|---|
| MBR340 | 3 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR3520 | 35 A, 20 V, SILICON, RECTIFIER DIODE, DO-203AA |
| MBR40100PTP | 40 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 |
| MBR4030PT | 40 A, 30 V, SILICON, RECTIFIER DIODE |
| MBR4030 | 40 A, 30 V, SILICON, RECTIFIER DIODE, DO-5 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3100RLG | 功能描述:肖特基二極管與整流器 3A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3150 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR320 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS |
| MBR3200 | 制造商:CTC 制造商全稱:Compact Technology Corp. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR3200 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。