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參數(shù)資料
| 型號： | MBR340 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MBR340 |
1
Rectifier Device Data
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16
″ from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B340
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current, TA = 65°C
(R
θJA = 28°C/W, P.C. Board Mounting, see Note 3)
IO
3.0
A
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75°C)
IFSM
80
A
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
TJ, Tstg
*65 to 150°C
°C
Peak Operating Junction Temperature
(Forward Current applied)
TJ(pk)
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
R
θJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
0.500
0.600
0.850
V
Maximum Instantaneous Reverse Current @ Rated dc
Voltage (1)
TL = 25°C
TL = 100°C
iR
0.60
20
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR340/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBR340
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
CASE 267–03
PLASTIC
Motorola Preferred Device
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| MBR3520 | 35 A, 20 V, SILICON, RECTIFIER DIODE, DO-203AA |
| MBR40100PTP | 40 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 |
| MBR4030PT | 40 A, 30 V, SILICON, RECTIFIER DIODE |
| MBR4030 | 40 A, 30 V, SILICON, RECTIFIER DIODE, DO-5 |
| MBR4045CT-1 | 20 A, SILICON, RECTIFIER DIODE, TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR340_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Axial Lead Rectifier |
| MBR340_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR340G | 功能描述:肖特基二極管與整流器 3A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR340G | 制造商:ON Semiconductor 功能描述:Axial Lead Rectifier |
| MBR340P | 制造商:Motorola Inc 功能描述:3 A, 40 V, SILICON, RECTIFIER DIODE |
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