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參數(shù)資料
| 型號(hào)： | MBR30H50PT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | MBR30H50PT-E3 |
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
Document Number: 88792
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V to 60 V
IFSM
200 A
VF
0.58 V, 0.63 V
IR
150 A
TJ max.
175 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 s pulse width, f = 1.0 kHz
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
30
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 s waveform)
ERSM
30
20
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change at rated VR
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR30H60PT | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR30H90CT-E3/45 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H100CT-HE3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF30H100CT-E3/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H100CTHE3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30H60CT | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30H60CT/45 | 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H60CT-E3/45 | 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H60CTG | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 30A/60V H-SERIES RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MBR30H60CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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