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參數(shù)資料
| 型號： | MBR30H50PT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 99K |
| 代理商： | MBR30H50PT-E3 |
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
Document Number: 88792
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1
1
100
10
1000
100
10 000
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR30H60PT | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR30H90CT-E3/45 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H100CT-HE3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF30H100CT-E3/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H100CTHE3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30H60CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30H60CT/45 | 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H60CT-E3/45 | 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H60CTG | 功能描述:二極管 - 通用，功率，開關(guān) 30A/60V H-SERIES RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MBR30H60CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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