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參數(shù)資料
| 型號(hào)： | MBR30H100CTG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifier 100 V, 30 A |
| 中文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MBR30H100CTG |
MBR30H100CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(T
C
= 156
°
C)
Per Diode
Per Device
I
F(AV)
15
30
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 151
°
C)
I
FM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
250
A
Operating Junction Temperature (Note 1)
T
J
+175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
W
AVAL
200
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance JunctiontoCase (Min. Pad)
JunctiontoAmbient (Min. Pad)
R
JC
R
JA
2.0
60
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 15 A, T
J
= 25
°
C)
(i
F
= 15 A, T
J
= 125
°
C)
(i
F
= 30 A, T
J
= 25
°
C)
(i
F
= 30 A, T
J
= 125
°
C)
v
F
0.76
0.64
0.88
0.76
0.80
0.67
0.93
0.80
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
1.1
0.0008
6.0
0.0045
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30H100CT-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR30H100CTH | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MBR30H100CTHE3/45 | 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H100CT-M3/4W | 制造商:Vishay Semiconductors 功能描述:30A,100V,DUAL SCHOTTKY RECT |
| MBR30H100PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Dual Schottky Rectifiers |
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