參數(shù)資料
型號(hào): MBR3060
廠商: ON SEMICONDUCTOR
元件分類: 整流器
英文描述: 3 A, 60 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 59-09, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 86K
代理商: MBR3060
Semiconductor Components Industries, LLC, 2002
January, 2002 - Rev. 0
216
Publication Order Number:
MBR3060/D
MBR3060
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon
power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low- voltage,
high- frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low V
f
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
°C Max. for 10 Seconds, 1/16″ from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to
the part number
Polarity: Cathode indicated by Polarity Band
ESD Ratings:
Machine Model = A
Human Body Model = 2
Marking: MBR3060
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
Vr
60
V
Average Rectified Forward Current
TL = 125°C (RqJL = 13°C/W,
P.C. Board Mounting)
Io
3.0
A
Non-Repetitive Peak
Surge Current
IFSM
125
A
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
TJ, Tstg
-65 to +150
°C
Peak Operating Junction
Temperature
(Forward Current Applied)
TJ(pk)
150
°C
Device
Package
Shipping
ORDERING INFORMATION
http://onsemi.com
AXIAL LEAD
CASE 59-09
PLASTIC
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
60 VOLTS
MBR3060
Axial Lead
1000 Units/Bag
MBR3060RL
Axial Lead
5000/Tape & Reel
MARKING DIAGRAM
MBR3060
MBR3060 = Device Code
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